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GOFORD 4435

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GOFORD 4435

MOQ : 1

Description : P-Channel 30V 10A 3.1W Surface Mount SOP-8

Gate Threshold Voltage (Vgs(th)) : 1.6V@250uA

Number : 1 P-Channel

Current - Continuous Drain(Id) : 10A

Operating Temperature - : -55℃~+150℃

Reverse Transfer Capacitance (Crss@Vds) : 300pF

Pd - Power Dissipation : 3.1W

Packaging Details : SOP-8

Delivery Time : 6-13 working days

Brand Name : 4435

Model Number : 4435

Output Capacitance(Coss) : 350pF

Drain to Source Voltage : 30V

RDS(on) : 16mΩ@10V;20mΩ@4.5V

Input Capacitance(Ciss) : 1.6nF

Gate Charge(Qg) : 30nC@10V

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Product Overview

The GOFORD 4435 is a semiconductor device utilizing advanced trench technology. It offers excellent Rds(on) and low gate charge, enabling operation with gate voltages as low as 4.5V. Its high power and current handling capability make it suitable for applications such as battery switches, load switches, and power management.

BrandGOFORD

Product Model4435

Package TypeSOP-8

CertificationsRoHS Compliant

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	BVdss	Vgs=0V, Id=-250pA	-30	-	-	V
Zero Gate Voltage Drain Current	Idss	Vds=-30V, Vgs=0V	-	-	1	pA
Gate-Body Leakage Current	Igs	Vds=120V, Vgs=0V	-	-	+100	nA
Gate Threshold Voltage	Vgs(th)	Vds=Vgs, Id=-250pA	-1	-1.6	-2.5	V
Drain-Source On-State Resistance	Rds(on)	Vgs=-10V, Id=-10A	-	16	20	m
Drain-Source On-State Resistance	Rds(on)	Vgs=-4.5V, Id=-5A	-	20	33	m
Forward Transconductance	gfs	Vds=-15V, Id=-10A	10	-	-	S
Input Capacitance	Ciss	Vds=15V, Vgs=0V, f=1.0MHz	-	1600	-	pF
Output Capacitance	Coss	Vds=15V, Vgs=0V, f=1.0MHz	-	350	-	pF
Reverse Transfer Capacitance	Crss	Vds=15V, Vgs=0V, f=1.0MHz	-	300	-	pF
Turn-on Delay Time	td(on)	Vds=-15V, Id=-1A, Vgs=10V, Rgen=6	-	10	-	nS
Turn-on Rise Time	tr	Vds=-15V, Id=-1A, Vgs=10V, Rgen=6	-	15	-	nS
Turn-Off Delay Time	td(off)	Vds=-15V, Id=-1A, Vgs=10V, Rgen=6	-	110	-	nS
Turn-Off Fall Time	tf	Vds=-15V, Id=-1A, Vgs=10V, Rgen=6	-	70	-	nS
Total Gate Charge	Qg	Vds=-15V, Id=-10A	-	30	-	nC
Gate-Source Charge	Qgs	Vds=-15V, Id=-10A, Vgs=-10V	-	55	-	nC
Gate-Drain Charge	Qgd	Vds=-15V, Id=-10A, Vgs=-10V	-	8	-	nC
Diode Forward Voltage	Vsd	Vgs=0V, Is=-5A	-	-	-1.2	V

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